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Based on technology, the next generation memory market can be broadly classified into volatile memory and non-volatile memory. Memories which perform both volatile and non-volatile functions are known as universal memory. Volatile memory, also known as flash memory, stores data for temporary period and loses the data it when the computer is powered off. Most volatile memories unit has faster read-out capability than that of non-volatile memory. However, it has much smaller data storage volume than non-volatile memory.
Some of the major semiconductor volatile memory includes dynamic RAM (DRAM) and Static RAM (SRAM). Non-Volatile memory stores data even when the computer is not powered. These memory devices are well suited for portable electronic devices, such as mobile phone, digital camera, and tablet PC. Non-volatile memories (NVM) are read-only memory (ROM), electrically-erasable ROM (EPROM), electrically-erasable-programmable ROM (EEPROM) and Flash memory. Various types of non-volatile memory are magneto-resistive RAM, resistive RAM, phase change memory, ferroelectric RAM and others. Whereas, the various types of volatile memory include dynamic random access memory (DRAM) and static random access memory (SRAM).
The next generation memory finds application in smart cards, automotive electronics, mass storage, consumer electronics, mobile phones and others. Based on interface, next generation memory market can be categorized into SAS, SATA, PCIe, DDR and I2C. Owing to the characteristics, such as high data rates with lower power dissipation levels, of next generation memory, their importance in electronics and semiconductor industry is increasing. With respect to technology, high scalability and lower power consumption acts as major drivers for the next generation memory market.
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The emergence of application sectors, such as neural network, industrial applications, and flexible electronics, lays significant opportunities for next generation memory market. Whereas, the major restraints for the next generation memory market include low write endurance rate, less storage densities, low stability in extreme environmental conditions, and high designing cost. In terms of density and scalability of NAND gate, the next generation memories are inefficient. However, their chip density is expected to improve in the long term due to ongoing research and development activities in this field.
North America dominates the next generation memory market; however, Asia-Pacific is witnessing strong growth owing to rising demand from countries such as Japan, China and South Korea.
Some of the major companies operating in next generation memory market include, Fujitsu Ltd., SanDisk Corporation, Samsung Electronics Co., Ltd., The International Business Machines Corporation (IBM), SK Hynix Inc., Adesto Technologies Corporation, Inc., Micron Technology, Inc., Toshiba Corporation, Cypress Semiconductor Corporation, Winbond Electronics Corporation, Crossbar Inc., Avalanche Technology Inc., and Micron Technology Inc.
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